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  dm t3003lfg document number: d s 37819 rev. 2 - 2 1 of 7 www.diodes.com june 2016 ? diodes incorporated d mt3003lfg 30v n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t c = + 25c 3 0v 3.2 m ? @ v gs = 10 v 100 a 5.5 m ? @ v gs = 4 .5v 85 a description this mosfet is designed to minimize the on - state resistance (r ds (on ) ) , yet maintain superior switching performance, making it ideal for high efficiency power management applications . applications ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? low r ds ( on ) C ensures on - state losses a re minimized ? excellent q gd r ds ( on ) product ( fom ) ? a dvanced t echnology f or dc - dc converts ? small f orm factor thermally efficient package enables higher density end products ? occupies just 33% o f the board area occupied b y so - 8 enabling smaller end product ? 100% uis ( avalanche ) rated ? lead - free finish; rohs c ompliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: p ower di ? 3333 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminal finish C matte tin a nnealed over copper leadframe. solderable per mil - std - 202, method 208 ? weight: 0.008 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmt 30 0 3 lfg - 7 p ower di3333 - 8 2 , 000 /tape & reel dmt 3003 lfg - 13 p ower di3333 - 8 3 , 000 /tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are define d as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information top view internal schematic sg2 = product type marking code yyww = date code marking yy = last digit of year (ex: 1 6 = 201 6 ) ww = week c ode (01 to 53) bottom view top view powerdi3333 - 8 s g2 y yww d s g 1 2 3 4 8 7 6 5 equivalent circuit powerdi is a registered trademark of diodes incorporated. s s s g d d d d pin 1 green
dm t3003lfg document number: d s 37819 rev. 2 - 2 2 of 7 www.diodes.com june 2016 ? diodes incorporated d mt3003lfg maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value units drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v t c = + 25 c t c = + 70 c i d 100 90 a continuous drain current (note 5 ) v gs = 10 v t a = + 25 c t a = + 70 c i d 2 2 1 8 a maximum continuous body diode f orward current (note 5 ) i s 3 a pulsed drain current ( 10 dm 100 a avalanche current , l= 1 mh i a s 16 a avalanche energy , l= 1 mh e a s 250 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) t a = + 25 c p d 2. 4 w thermal resistance, junction to ambient (note 5 ) r j a 52 c/w total power dissipation (note 5 ) t c = + 25c p d 62 w thermal resistance, junction to case (note 6 ) r j c 2 c/w operating and storage temperature range t j, t stg - 55 to + 150 c electrical characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 3 0 gs = 0v, i d = 1m a zero gate voltage drain current i dss ds = 24 v, v gs = 0v gate - source leakage i gss gs = + 20 v, v ds = 0v v gs = - 16 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs (th) 1 ds = v gs , i d = 250 a ds(on) ? gs = 10 v, i d = 20 a gs = 4 .5v, i d = 15 a diode forward voltage v sd gs = 0v, i s = 1 0 a dynamic characteristics (note 8 ) input capacitance c iss ds = 15 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1 mhz total gate charge ( v gs = 4.5 v ) q g ds = 1 5 v, i d = 20 a total gate charge ( v gs = 10 v ) q g gs gd d(on) dd = 15 v, v gs = 10 v, r l = 0.75 ? g = 3 ? d = 20 a turn - on rise time t r d(off) f rr f = 15 a , d i /d t = 5 00a/ rr notes: 5 . device mounted on fr - 4 substrate pc b oard, 2oz copper, with thermal b ias to bottom layer 1 - inch square copper plate . 6. thermal resistance from junction to soldering p oint (on the exposed drain pad). 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dm t3003lfg document number: d s 37819 rev. 2 - 2 3 of 7 www.diodes.com june 2016 ? diodes incorporated d mt3003lfg 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = 2.8v v gs = 4.0v v gs = 10.0v v gs = 4.5v v gs = 3.5v v gs = 2.5v v gs = 2.2v v gs = 3.0v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic - 55 o c 25 o c 85 o c 150 o c 125 o c v ds = 5v 0 0.001 0.002 0.003 0.004 0.005 0.006 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ) i d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 4.5v v gs = 10v 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 2 4 6 8 10 12 14 16 r ds(on) , drain - source on - resistance ( ) v gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 20a 0 0.001 0.002 0.003 0.004 0.005 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ) i d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature v gs = 10v 150 o c 125 o c - 55 o c 25 o c 85 o c 0 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ) figure 6. on - resistance variation with junction temperature v gs = 10v, i d = 20a v gs = 4.5v, i d = 15a
dm t3003lfg document number: d s 37819 rev. 2 - 2 4 of 7 www.diodes.com june 2016 ? diodes incorporated d mt3003lfg 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ) t j , junction temperature ( ) figure 7. on - resistance variation with junction temperature v gs = 10v, i d = 20a v gs = 4.5v, i d = 15a 0 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( ) figure 8. gate threshold variation vs. junction temperature i d = 250 a i d = 1ma 0 5 10 15 20 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t j = 125 o c t j = 85 o c t j = 25 o c t j = - 55 o c v gs = 0v t j = 150 o c 10 100 1000 10000 0 5 10 15 20 25 30 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 v gs (v) q g (nc) figure 11. gate charge v ds = 15v, i d = 20a 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area p w =10s p w =1s p w =10ms p w =100 s dc r ds(on) limited dut on 1*mrp board v gs =10v p w =1ms t j(max) = 150 t a = 25 single pulse p w =100ms
dm t3003lfg document number: d s 37819 rev. 2 - 2 5 of 7 www.diodes.com june 2016 ? diodes incorporated d mt3003lfg 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r ja (t) = r(t) * r ja r ja = 51 /w duty cycle, d = t1 / t2
dm t3003lfg document number: d s 37819 rev. 2 - 2 6 of 7 www.diodes.com june 2016 ? diodes incorporated d mt3003lfg package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. p ower di3333 - 8 p ower di3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? ? ? 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e ? ? ? ? 0.65 e1 0.79 0.89 0.84 l 0.35 0.45 0.40 l1 ? ? ? ? 0.39 z ? ? ? ? 0.515 all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. p ower di3333 - 8 dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 e1 1 8 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x) x3 y3 x y c y1 y2 x1 x2 1 8
dm t3003lfg document number: d s 37819 rev. 2 - 2 7 of 7 www.diodes.com june 2016 ? diodes incorporated d mt3003lfg important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products d escribed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indem nify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applic ation. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this do cument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are spec ifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or syste ms which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expec ted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements conce rning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customer s must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.c om


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